MTB013N10RE3 |
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| Part Number | MTB013N10RE3 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RE3 Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive ... |
| Features |
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ) Symbol MTB013N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB013N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing sp... |
| Datasheet |
 MTB013N10RE3 Data Sheet
PDF 347.15KB |
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