2EDL23I06PJ 600V Half Bridge Gate Driver

2EDL23I06PJ 600V Half Bridge Gate Driver

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present .

Features

 Infineon thin-film-SOI-technology
 Fully operational to +600 V
 Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
 Floating channel designed for bootstrap operation
 Output source/sink current capability +1.8 A/-2.5 A
 Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology
 Interlock, Enable, Fault, and over current protection
 10 ns typ., 60 ns max. propagation delay matching
 dV/dt immune ±50 V
 Undervoltage lockout for both channels
 3.3 V, 5 V and 15 V input logic compatible
 RoHS compliant Potential applications Product summar.