BD235 Inchange Semiconductor Silicon NPN Power Transistors Datasheet. Stock, Price

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BD235

Inchange Semiconductor
BD235
BD235 BD235
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Part Number BD235
Manufacturer Inchange Semiconductor
Description ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~1...
Features isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD233 BD235 BD237 IC= 50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A VBE(on) ICBO IEBO Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current IC= 1.0A; VCE= 2V VCB= VCBOma...

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