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AUIRF7341Q |
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| Part Number | AUIRF7341Q |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area... |
| Features |
Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operati... |
| Document |
 AUIRF7341Q Data Sheet
PDF 403.32KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual P-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual N/P-Channel MOSFET |
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Infineon |
Dual N-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual P-Channel MOSFET |
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International Rectifier |
Power MOSFET |
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Infineon |
Dual N/P-Channel MOSFET |
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