CHK8015-99F Datasheet

CHK8015-99F 16W Power Transistor

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die fo.

Features

■ Wide band capability up to 18GHz
■ Pulsed and CW operating modes
■ GaN technology: High Pout & High PAE
■ DC bias: VD=30V @ID_Q=200mA
■ Chip size 0.88x2x0.1mm
■ RoHS N°2011/65
■ REACh N°1907/2006 Main Electrical Characteristics Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA Symbol Parameter Min GSS Small Signal Gain PSAT Saturated Output Power PAE Max Power Added Efficiency GPAE_MAX Associated Gain at Max PAE These values are deduced from elementary power cell performances Typ 17 20 68 11 Max Unit dB W % dB Ref. : DSCHK801.