PXAC261002FC |
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| Part Number | PXAC261002FC |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dua... |
| Features |
include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC261002FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture 17 60
16 Gain
15
50 40
14 30
13 20
12 Efficiency
10
11 29
c261002fc_g1
0
33 37 41 45 49
Output Power (dBm)
Features
• Broadband internal i... |
| Datasheet |
 PXAC261002FC Data Sheet
PDF 158.01KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
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|
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
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|
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
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|
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
|
|
|
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
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|
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|