PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET

PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET

The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDM.

Features

input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW 24 60 20 Efficiency 40 16 Gain 20 12 8 PAR @ 0.01% CCDF 0 -20 4 -40 0 25 30 35 40 45 Average Output Power (dBm) c201602fc-gr1a -60 50 Features
• Asymmetric Doherty design - Main: 55 W T.