PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET

PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufa.

Features

include dual-path design, input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC210802FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 19 BW 3.84 MHz, Doherty Fixture Efficiency 18 55 50 17 45 16 Gain 40 15 35 14 30 13 c210802fc-gc 25 32 34 36 38 40 42 44 46 48 Output Power (dBm) Feature.