IPG20N04S4-08A Power-Transistor

IPG20N04S4-08A Power-Transistor

IPG20N04S4-08A OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product.

Features

• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI) Product Summary VDS RDS(on),max4) ID 40 V 7.6 mΩ 20 A PG-TDSON-8-10 1 Type IPG20N04S4-08A Package PG-TDSON-8-10 Marking 4N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, sing.