SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package.
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101
SPD08P06P G
Product Summary V DS R DS(on),max ID
-60 V 0.3 Ω -8.8 A
PG-TO252-3
Type
Package
SPD08P06PG PG-TO252-3
Tape and reel information 1000 pcs / reel
Marking Lead free 08P06P Yes
Packing Non dry
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Avalanche energy, single pulse
E AS I D=8.83 A, R GS=25 Ω
Avalanche energy, periodic limited b.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | SPD08P06P |
Infineon Technologies |
SIPMOS Power-Transistor | |
2 | SPD0801 |
SSDI |
(SPD0801 - SPD1001) SCHOTTKY RECTIFIER | |
3 | SPD0801SMS |
SSDI |
(SPD0801SMS - SPD1001SMS) SCHOTTKY RECTIFER | |
4 | SPD0802 |
SSDI |
(SPD0802 - SPD1002) SCHOTTKY RECTIFIER | |
5 | SPD0802SMS |
SSDI |
(SPD0802SMS - SPD1002SMS) SCHOTTKY RECTIFIER | |
6 | SPD08N05L |
Infineon Technologies |
SIPMOS-R POWER TRANSISTOR | |
7 | SPD08N10 |
Infineon Technologies |
SIPMOS Power Transistor | |
8 | SPD08N10 |
Infineon Technologies |
SIPMOS Power Transistor | |
9 | SPD08N50C3 |
Infineon Technologies |
Power Transistor | |
10 | SPD08N50C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor | |
12 | SPD01510KS |
SiPower |
Spandard Recovery Diodes | |
13 | SPD01520KS |
SiPower |
Spandard Recovery Diodes | |
14 | SPD01530KS |
SiPower |
Spandard Recovery Diodes | |
15 | SPD01540KS |
SiPower |
Spandard Recovery Diodes |