SPD08P06PG Power-Transistor

SPD08P06PG Power-Transistor

SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package.

Features

• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω Avalanche energy, periodic limited b.