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 DataSheet (1.60MB)
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Diode RapidSwitchingEmitterControlledDiode IDW30E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDW30E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode Features: •650VEmitterControlledtechnology •Temperaturestableb.
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•Softnessfactor>1
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating;RoHScompliant
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies Packagepindefinition:
•Pin1-notconnected
•Pin2andbackside-cathode
•Pin3-anode
A C
12 3
KeyPerforma.
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | IDW30E60 |
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Fast Switching Emitter Controlled Diode |
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| 2 | IDW30C65D1 |
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Diode |
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| 3 | IDW30C65D2 |
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Diode |
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| 4 | IDW30G120C5B |
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Silicon Carbide Schottky Diode |
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| 5 | IDW30G65C5 |
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SiC Schottky Barrier diodes |
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| 6 | IDW32G65C5B |
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Silicon Carbide Diode |
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| 7 | IDW100E60 |
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Fast Switching Emitter Controlled Diode |
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| 8 | IDW10G120C5B |
Infineon |
Silicon Carbide Schottky Diode |
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| 9 | IDW10G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
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| 10 | IDW12G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
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| 11 | IDW15E65D2 |
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| 12 | IDW15G120C5B |
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Silicon Carbide Schottky Diode |
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| 13 | IDW16G65C5 |
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SiC Schottky Barrier diodes |
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| 14 | IDW20C65D2 |
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Diode |
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| 15 | IDW20G120C5B |
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Silicon Carbide Schottky Diode |
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