2SC6017 Silicon NPN Power Transistor

2SC6017 Silicon NPN Power Transistor

·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2169 APPLICATIONS ·Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U.

Features

turation Voltage IC= 5A; IB= 250mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 250mA V(BR)CEO Collector-Emitter Voltage Breakdown IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V MIN TYP. MAX UNIT 0.36 V 1.4 V 50 V 6 V 10 μA 10 μA 200 700 60 pF 200 MHz isc website：www.iscsemi.com 2 isc & iscsemi is r.