2SC4331-Z |
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| Part Number | 2SC4331-Z |
| Manufacturer | Inchange Semiconductor |
| Description | ·Available for high-current control in small dimension ·Low collector saturation voltage ·Fast switching speed ·High DC current gain and excellent linearity ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
ding mounted
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA
VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA
VBE(sat)-1NOTE Base-Emitter Saturation Voltage
IC= 3A; IB= 150mA
VBE(sat)-2NOTE Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1... |
| Datasheet |
 2SC4331-Z Data Sheet
PDF 223.93KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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NEC |
Silicon Power Transistor |
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Renesas |
SILICON POWER TRANSISTOR |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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NEC |
Silicon Power Transistor |
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Renesas |
SILICON POWER TRANSISTOR |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
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