Search by part number and manufacturer or description
·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA.
Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -1A; IB= -100mA VCB= -120V; IE= 0 VEB= -4V; IC= 0 -1.5 V -1.0 μA -1.0 μA hFE DC Current Gain IC= -0.1A; VCE= -5V 56 180 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 30 pF fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -10V,f= 100MHz 50 MHz NOTICE： ISC reserves the rights to make changes of t.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR |
|
|
|
|
INCHANGE |
PNP Transistor |
|
|
|
|
INCHANGE |
PNP Transistor |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
|
|
|
GME |
PNP Epitaxial Planar Silicon Transistors |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR |
|
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
|
|
|
SeCoS |
PNP Plastic Encapsulated Transistor |
|
|
|
|
LGE |
PNP Transistor |
|
|
|
|
Rohm |
Power Transistor |
|
|
|
|
Kexin |
Power Transistor |
|
|
|
|
Rohm |
Medium power Transistor |
|
Click to view a larger image
