logo
Search by part number and manufacturer or description
GM72V66841ET
zoom Click to view a larger image

GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM

Document Datasheet DataSheet (86.71KB)

GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM

The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word.

Features

* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.3V single Power supply * LVTTL interface * Max Clock frequency 143/133/125/100MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation Auto refresh / Self refresh * Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP * Programmable CAS latency : 2/3 * 4 Banks can operate independently or simultaneously * Burst read/burst write or burst read/single write operation capability * Input and output masking by DQM input * One Clock of back to bac.

GM72V66841ET GM72V66841ET GM72V66841ET
Distributor Stock Price Buy

Similar Product

No. Part # Manufacture Description Datasheet
1 GM72V66841ELT
Hynix Semiconductor
2M x 8-Bit x 4 Bank SDRAM Datasheet
2 GM72V66841ELT
LG Semicon
2M x 8-Bit x 4 Bank SDRAM Datasheet
3 GM72V66841ET
LG Semicon
2M x 8-Bit x 4 Bank SDRAM Datasheet
4 GM72V66841Exx
LG Semicon
2M x 8-Bit x 4 Bank SDRAM Datasheet
5 GM72V66841Exx
Hynix Semiconductor
2M x 8-Bit x 4 Bank SDRAM Datasheet
More datasheet from Hynix Semiconductor
Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)