2SD2165 Silicon NPN Power Transistor

2SD2165 Silicon NPN Power Transistor

·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching.

Features

otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 30mA 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 800 3200 hFE-2 DC Current Gain IC= 3A; VCE= 5V 500 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 110 MHz Cob Output Capacitance VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF
 hFE-1 Classifications M L 800-1600 1000-2000 .