KTC4419 Silicon NPN Power Transistors

KTC4419 Silicon NPN Power Transistors

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·High speed DC-DC converter applications ABS.

Features

wn Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 4V hFE-2 DC Current Gain IC= 1.5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 0.3A; VCE= 12V KTC4419 MIN TYP. MAX UNIT 400 V 0.5 V 1.0 V 0.1 mA 0.1 mA 20 10 40 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification..