KTC2200 Datasheet

KTC2200 Silicon NPN Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC co.

Features

C= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 400V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 5V KTC2200 MIN TYP. MAX UNIT 500 V 400 V 7 V 1.5 V 2.0 V 100 μA 1 mA 10 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T.