FDMS2502SDC N-Channel MOSFET

FDMS2502SDC N-Channel MOSFET

„ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semi.

Features

General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has .