SST12LF09 2.4 GHz High-Linearity, WLAN Front-End Module FEATURES • Input/output ports internally matched to 50 and DC decoupled • Package available - 16-contact X2QFN – 2.5mm x 2.5mmx 0.4mm • All non-Pb (lead-free) devices are RoHS compliant Transmitter Chain • Gain: - Typically 24 dB gain • Dynam.
• Input/output ports internally matched to 50 and DC decoupled
• Package available - 16-contact X2QFN
– 2.5mm x 2.5mmx 0.4mm
• All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain
• Gain: - Typically 24 dB gain
• Dynamic linear output power: - Meets 802.11g OFDM ACPR requirement up to 21 dBm using 3.6V VCC and 22.5 dBm using 5V VCC - 17 dBm using 3.6V, 18 dBm using 5.0V, at 3% EVM for 802.11g, 54 Mbps - 15 dBm using 3.6V, 16 dBm using 5.0V, at 1.75% dynamic EVM for 256 QAM, 40 MHz bandwidth
• Operating current - 150 mA @ POUT = 17 dBm for 802.11g, 3.6V - 130 mA @ POUT = 15 dBm .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | SST12LF02 |
Microchip |
High-Efficiency FEM | |
2 | SST12LF03 |
Silicon Storage Technology |
High-Efficiency Front-end | |
3 | SST12LN01 |
Microchip |
2.4-2.5 GHz WLAN Low-Noise Amplifier | |
4 | SST12LP00 |
SST |
Power Amplifier | |
5 | SST12LP07 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
6 | SST12LP07A |
Silicon Storage Technology |
High-Gain Power Amplifier | |
7 | SST12LP08 |
Silicon Storage Technology |
High-Gain Power Amplifier | |
8 | SST12LP10 |
SST |
High-Linearity Power Amplifier | |
9 | SST12LP14 |
SST |
2.4 GHz Power Amplifier | |
10 | SST12LP14A |
SST |
High-Gain Power Amplifier | |
11 | SST12LP14C |
Silicon Storage Technology |
High-Gain Power Amplifier | |
12 | SST12LP15 |
SST |
High-Gain Power Amplifier | |
13 | SST12LP15A |
SST |
High-Power and High-Gain Power Amplifier | |
14 | SST12LP15B |
Microchip |
256 QAM Power Amplifier | |
15 | SST12LP17E |
Microchip |
High-Gain Power Amplifier Module |