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·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power ampl.
tance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -80 V VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A -1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC= .
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Kexin |
Complementary Power Transistors |
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Fairchild |
PNP Epitaxial Silicon Transistor |
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ST Microelectronics |
Complementary power transistors |
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Motorola |
SILICON POWER TRANSISTORS |
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nexperia |
8A PNP high power bipolar transistor |
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ON Semiconductor |
Complementary Power Transistors |
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nexperia |
8A PNP high power bipolar transistor |
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STMicroelectronics |
Low voltage complementary power transistors |
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ST Microelectronics |
(MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Kexin |
Complementary Power Transistors |
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ON |
Complementary Power Transistors |
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Fairchild |
General Purpose Amplifier |
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Motorola |
SILICON POWER TRANSISTORS |
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GME |
Epitaxial Planar NPN Transistor |
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