MJD41C |
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| Part Number | MJD41C |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type MJD42C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations ... |
| Features |
4 ℃/W
MJD41C
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 4V
hFE-2
DC Current G... |
| Document |
 MJD41C Data Sheet
PDF 240.79KB |
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