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INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR2550CT FEATURES ·Low power loss, high efficiency. ·High surge capacity. MECHANICAL CHARACTERISTICS ·in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ·Metal silicon junction, maj.
·Low power loss, high efficiency.
·High surge capacity.
MECHANICAL CHARACTERISTICS
·in low voltage, high frequency inverters, free wheeling,
and polarity protection applications.
·Metal silicon junction, majority carrier conduction.
·High current capacity, low forward voltage drop.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM IF(AV) IFSM
DC Blocking Voltage
Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method)
50 30 150
TJ Junction Tempe.
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