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IS42VS83200J |
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| Part Number | IS42VS83200J |
| Manufacturer | ISSI |
| Description | ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to t... |
| Features |
• Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: – Sequential and Interleave • Auto Refresh (CBR) OPTIONS • Configurations: – 32M x 8 – 16M x 16 – 8M x 32 • Power Supply IS42VSxxx – Vdd/Vddq = 1.8V • Packages: x8 –TSOP II (54) x16 –TSOP II (54) x32 – TSOP II (86) • Temperature Range: Industrial ( –40 ºC to 85 ºC) FEBRUARY 2015 DESCRIPTION ISSI's 256Mb Synchronous DRAM achieves high-speed data... |
| Document |
 IS42VS83200J Data Sheet
PDF 275.90KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
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Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM |
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ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM |
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Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |
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ISSI |
256Mb Synchronous DRAM |
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Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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ISSI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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