TIP35CF Silicon NPN Power Transistor

TIP35CF Silicon NPN Power Transistor

·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed.

Features

ademark isc Silicon NPN Power Transistor TIP35CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT *VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 100 V *VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.8 V *VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 5A 4.0 V *VBE(on)-1 Base-Emitter On Voltage IC= 15A ; VCE= 4V 2.0 V *VBE(on)-2 Base-Emitter On Voltage IC= 25A ; VCE= 4V 4.0 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 1.0 mA ICBO Collector Cutoff Current V.