MJD32C |
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| Part Number | MJD32C |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations fo... |
| Features |
nction to Ambient 80 ℃/W
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD32C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICES
Collector Cutoff Current
VCE= -100V; VEB= 0
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Cur... |
| Document |
 MJD32C Data Sheet
PDF 250.20KB |
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