C3M0065100K |
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| Part Number | C3M0065100K |
| Manufacturer | Cree |
| Description | VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features Package • New C3MTM SiC MOSFET technol... |
| Features |
Package
• New C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converter... |
| Datasheet |
 C3M0065100K Data Sheet
PDF 968.41KB |
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CREE |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Cree |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Cree |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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CREE |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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CREE |
Silicon Carbide Power MOSFET |
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