MSN10B0K |
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| Part Number | MSN10B0K |
| Manufacturer | MORESEMI |
| Description | MSN10B0K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ) ● Special process technology for high ESD capability ● High ... |
| Features |
● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Pack... |
| Datasheet |
 MSN10B0K Data Sheet
PDF 556.05KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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