MSN04C0K |
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Part Number | MSN04C0K |
Manufacturer | MORESEMI |
Description | MSN04C0K 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ) ● Special process technology for high ESD capability ● High den... |
Features |
● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking anMdSPO9r4d35eWring Information Device Marking Device Device P... |
Document |
MSN04C0K Data Sheet
PDF 585.58KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel Enhancement Mode Power MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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MORESEMI |
N-Channel MOSFET |
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