MSC4001 RF AND MICROWAVE TRANSISTORS

MSC4001 RF AND MICROWAVE TRANSISTORS

The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range. ABSOLUTE MAXIMUM .

Features

• 3:1 VSWR AT RATED CONDITIONS
• HERMETIC STRIPAC® PACKAGE
• POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0
  – 4.4 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Tem.