CEE02N6G N-Channel Enhancement Mode Field Effect Transistor

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE MA.

Features

600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 600 ±30 2 8 56 0.44 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resist.