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CEE02N6A |
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| Part Number | CEE02N6A |
| Manufacturer | CET |
| Description | CEE02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capa... |
| Features |
600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package.
D
G D S
CEE SERIES TO-126
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
600
±30
1.3 5.2 41 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter The... |
| Document |
 CEE02N6A Data Sheet
PDF 453.19KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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CET |
N-Channel Enhancement Mode Field Effect Transistor |
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CET |
N-Channel MOSFET |
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Sumida |
xDSL POTs Splitter |
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Sumida |
Current Sense Transformer |
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Sumida |
Current Transformer |
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Sumida |
General Power Transformer |
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Sumida |
Transformer |
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Sumida |
Power over Ethernet Transformer |
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Sumida |
Transformer |
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Sumida |
Strobe Light Transformer |
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