MTE300P10J3 P-Channel Enhancement Mode Power MOSFET

MTE300P10J3 P-Channel Enhancement Mode Power MOSFET

Spec. No. : C136J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.6A 368mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free Lead Plating & Halo.

Features

• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTE300P10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE300P10J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE300P10J3 CYStek Product Specification Spec. No. : C136J3 .