Document | DataSheet (268.15KB) |
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rati.
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
MTB04N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage Gate-Sourc.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | MTB04N03AQ8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB04N03E3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB04N03F3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB04N03J3 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB04N03Q8 |
CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET |