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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A • Current gain - bandwidth product fT = .
• Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C
• Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A
• Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA
TO-220
Pin
1. Base
2. Collector 3. Emitter 4. Collector (Case)
Maximum Ratings
Dimensions
A B C D E F G H I J K L M O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage Collector current - continuous
- peak Base current Total power dissipation at tc = 25°C derate above 25°C
.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | TIP31 |
GME |
Epitaxial Planar NPN Transistor |
|
| 2 | TIP31 |
CDIL |
NPN TRANSISTORS |
|
| 3 | TIP31 |
INCHANGE |
NPN Transistor |
|
| 4 | TIP31 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | TIP31 |
SavantIC |
Silicon NPN Power Transistors |
|
| 6 | TIP31 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 7 | TIP31 |
Bourns |
NPN SILICON POWER TRANSISTORS |
|
| 8 | TIP31 |
Central Semiconductor |
SILICON NPN POWER TRANSISTORS |
|
| 9 | TIP31 |
SEMIHOW |
PNP Epitaxial Silicon Darlington Transistor |
|
| 10 | TIP31 |
TAITRON |
NPN Power Transistors |
|
| 11 | TIP31 |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 12 | TIP31 |
SeCoS |
NPN Plastic-Encapsulate Transistor |
|
| 13 | TIP31 |
Multicomp |
High Power Bipolar Transistor |
|
| 14 | TIP31 |
nELL |
Complementary Silicon Power Transistor |
|
| 15 | TIP31A |
GME |
Epitaxial Planar NPN Transistor |
|
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