Document | DataSheet (130.90KB) |
The device is PNP transistor manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • High current gain ch.
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast-switching speed
Table 1. Device summary
Order code
Marking
Package
2STF2360
2360
SOT-89
Packaging Tape and reel
December 2014
This is information on a product in full production.
DocID13309 Rev 6
1/11
www.st.com
Contents
Contents
2STF2360
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .
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