GS4288C09L 288Mb CIO Low Latency DRAM

GS4288C09L 288Mb CIO Low Latency DRAM

GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rat.

Features

• Pin- and function-compatible with Micron RLDRAM® II
• 533 MHz DDR operation (1.067Gb/s/pin data rate)
• 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
• 8M x 36, 16M x 18, and 32M x 9 organizations available
• 8 internal banks for concurrent operation and maximum bandwidth
• Reduced cycle time (15 ns at 533 MHz)
• Address Multiplexing (Nonmultiplexed address option available)
• SRAM-type interface
• Programmable Read Latency (RL), row cycle time, and burst sequence length
• Balanced Read and Write Latencies in order to optimize data bus utilization
• Data mask for Write commands
•.