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2SB1100 |
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| Part Number | 2SB1100 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage
IC= -10A; IB= -25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A; IB= -25mA
ICBO
Collector Cutoff Current
VCB= -100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -10A ; VCE= -2V
hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 2SB1100 MIN TYP. MAX UNIT -1.5 V -2.0 V -10 μA -3 mA 1000 30000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif... |
| Document |
 2SB1100 Data Sheet
PDF 218.34KB |
| Distributor | Stock | Price | Buy |
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Hitachi Semiconductor |
PNP Transistor |
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INCHANGE |
PNP Transistor |
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Hitachi Semiconductor |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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INCHANGE |
PNP Transistor |
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Hitachi Semiconductor |
PNP Transistor |
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INCHANGE |
PNP Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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SavantIC |
SILICON POWER TRANSISTOR |
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