·Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1628 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCE.
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Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SA811A |
NEC |
PNP SILICON TRANSISTOR | |
2 | 2SA812 |
NEC |
PNP Transistor | |
3 | 2SA812 |
WEITRON |
PNP Transistor | |
4 | 2SA812 |
Rectron |
SOT-23 BIPOLAR TRANSISTORS | |
5 | 2SA812 |
HOTTECH |
PNP Transistor | |
6 | 2SA812 |
Kexin |
PNP Transistors | |
7 | 2SA812 |
JCET |
PNP Transistor | |
8 | 2SA812 |
DC COMPONENTS |
PNP Transistor | |
9 | 2SA812 |
GME |
Silicon Epitaxial Planar Transistor | |
10 | 2SA812 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
11 | 2SA812 |
TRANSYS |
Plastic-Encapsulated Transistors | |
12 | 2SA812-M4 |
MCC |
PNP Transistor | |
13 | 2SA812-M5 |
MCC |
PNP Transistor | |
14 | 2SA812-M6 |
MCC |
PNP Transistor | |
15 | 2SA812-M7 |
MCC |
PNP Transistor |