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GS81314LD19GK |
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| Part Number | GS81314LD19GK |
| Manufacturer | GSI Technology |
| Description | Symbol Description SA[21:1] D[35:0] Q[35:0] QVLD[1:0] CK, CK KD[1:0], KD[1:0] CQ[1:0], CQ[1:0] R W MRW PLL RST ZQ ZT RCS Address — Read or write address is registered on CK. Write Data — Register... |
| Features |
• 4Mb x 36 and 8Mb x 18 organizations available • Organized as a single logical memory bank • 933 MHz maximum operating frequency • 933 MT/s peak transaction rate (in millions per second) • 134 Gb/s peak data bandwidth (in x36 devices) • Separate I/O DDR Data Buses • Non-multiplexed SDR Address Bus • One operation - Read or Write - per clock cycle • No address/bank restrictions on Read and Write ops • Burst of 4 Read and Write operations • 5 cycle Read Latency • On-chip ECC with virtually zero SER • Loopback signal timing training capability • 1.2V ~ 1.3V nominal core voltage • 1.2V ~ 1.3V HST... |
| Document |
 GS81314LD19GK Data Sheet
PDF 261.79KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 2 Multi-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 2 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 2 Multi-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 2 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaDDR-IVe Burst of 2 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaDDR-IVe Burst of 2 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 4 Multi-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM |
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GSI Technology |
144Mb SigmaQuad-IVe Burst of 4 Multi-Bank ECCRAM |
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