Analog Power AM6968NH Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 24 @ VGS =.
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
24 @ VGS = 4.5V 32 @ VGS = 2.5V
ID (A) 6.5 5.6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
6.5 5.3 30 1.8
Power Dissipation a
TA=25°C TA=70°C
PD
1..
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