AM20N10-250DE |
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| Part Number | AM20N10-250DE |
| Manufacturer | Analog Power |
| Description | Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.... |
| Features |
=25oC ID
100 ±20 11
IDM 36
IS TC=25oC PD
30 50
TJ, Tstg -55 to 175
V
A
A W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number: DS-AM20N10-250DE_A
Analog Power
AM20N10-250DE
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-St... |
| Datasheet |
 AM20N10-250DE Data Sheet
PDF 81.01KB |
| Distributor | Stock | Price | Buy |
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