AM90P03-02P P-Channel MOSFET

AM90P03-02P P-Channel MOSFET

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered produ.

Features

25oC ID IDM IS TC=25oC PD TJ, Tstg -40 ±20 90 390 110 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a. Package Limited b. Pulse width limited by maximum junction temperature Maximum Units 62.5 oC/W 0.5 oC/W PRELIMINARY 1 Publication Order Number: DS-AM90P03-02_A Analog Power AM90P03-02P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source .