AP60N2R5H Advanced Power Electronics N-Channel MOSFET

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AP60N2R5H

Advanced Power Electronics
AP60N2R5H
AP60N2R5H AP60N2R5H
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Part Number AP60N2R5H
Manufacturer Advanced Power Electronics
Description AP60N2R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an ext...
Features otal Power Dissipation 56.8 W PD@TA=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy4 2W 8 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 2.2 62.5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201412251 AP60N2R5H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units ...

Datasheet Datasheet AP60N2R5H Data Sheet
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