2SB526 Silicon PNP Power Transistor

2SB526 Silicon PNP Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SD356 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

Features

ge IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A; IB= -30mA VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.3A; VCE= -4V
 hFE Classifications C D E 55-110 90-180 150-300 2SB526 MIN TYP. MAX UNIT -80 V -90 V -5 V -1.0 V 0.7 V -1 mA -10 μA 55 300 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat.