DatasheetsPDF.com

MT3S19TU

Toshiba Semiconductor
Part Number MT3S19TU
Manufacturer Toshiba Semiconductor
Published Jun 14, 2016
Description Silicon NPN Epitaxial Planar Type Transistor
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU MT
Datasheet PDF File MT3S19TU PDF File

MT3S19TU
MT3S19TU


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure : NF = 1.
5 dB (typ.
) (@ f = 1 GHz) • High Gain : |S21e|2=13 dB (typ.
) (@ f = 1 GHz) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 23 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 Marking 3 T6 1.
BASE 2.
EMITTER 3.
COLLECTOR 12 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.
6 mg (typ.
) Characteristics Symbol Rating Unit Collector-basevoltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg 12 6 2 80 10 900 150 −55 to 150 V V V mA mA mW °C °C Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-03-31 Microwave Characteristics (Ta = 25°C) MT3S19TU Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF OIP3 VCE=5 V, IC=50 mA VCE=5 V, IC=50 mA, f=500 MHz VCE=5 V, IC=50 mA, f=1 GHz VCE=5 V, IC=20 mA, f=1 GHz VCE=5 V, IC=50 mA, f=500 MHz, ⊿f=1 MHz Min Typ.
Max Unit 9 11 ⎯ GHz － 19 ⎯ dB 11 13 ⎯ ⎯ 1.
5 1.
9 dB 29.
5 33.
5 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteristics ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)