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MT3S19

Toshiba Semiconductor
Part Number MT3S19
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Fea...
Datasheet PDF File MT3S19 PDF File

MT3S19
MT3S19


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure:NF=1.
5 dB (typ.
) (@ f=1 GHz) • High Gain:|S21e|2=12.
5 dB (typ.
) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1.
Base 2.
Emitter 3.
Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB Pc PC(Note 1) Tj Tstg 12 6 2 80 10 180 800 150 −55 to 150 V V V mA mA mW °C °C Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-03-31 Microwave Characteristics (Ta = 25°C) MT3S19 Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF OIP3 VCE=5 V,IC=50 mA VCE=5 V,IC=50 mA,f=500 MHz VCE=5 V,IC=50 mA,f=1 GHz VCE=5 V,IC=20 mA,f=1 GHz VCE=5 V,IC=50 mA,f=500 MHz, ⊿f=1 MHz Min Typ.
Max Unit 10 12 ⎯ GHz ⎯ 18 10.
5 12.
5 ⎯ ⎯ dB ⎯ 1.
5 1.
9 dB 29.
5 33.
5 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Collector cut-off cur...


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