SILICON RECTIFIER DIODES
Description
BYW27-50 - BYW27-1000
PRV : 50 - 1000 Volts Io : 1.
0 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.
34 gram
SILICON RECTIFIER DIODES DO - 41
0.
107 (2.
7) 0.
080 (2.
0)
0.
034 (0.
86) 0.
028 (0.
71)
1.
00 (25.
4) MIN.
0.
205 (5.
2) 0.
166 (4.
2)
1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.
375"(9.
5mm) Lead Length Ta = 70°C
Peak Forward Surge Current
8.
3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.
0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM VRMS VDC
BYW 27-50
50 35 50
BYW BYW BYW 27-100 27-200 27-400
100 200 400 70 140 280 100 200 400
BYW BYW BYW 27-600 27-800 27-1000
600 800 1000 420 560 700 600 800 1000
UNIT
V V V
IF 1.
0 A
IFSM
VF IR IR(H) CJ RθJA TJ TSTG
50
1.
0 0.
2 25 30 50 - 65 to + 175 - 65 to + 175
A
V µA µA pF °C/W °C °C
Notes :
(1) Measured at 1.
0 MHz and applied reverse voltage of 4.
0VDC (2) Thermal resistance from Junction to Ambient at 0.
375" (9.
5mm) Lead Lengths, P.
C.
Board Mounted.
Page 1 of 2
Rev.
02 : March 25, 2005
AVERAGE FORWARD OUTPUT CURRENT, AMPERES
RATING AND CHARACTERISTIC CURVES ( BYW27-50 - ...
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