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STF8236

SamHop Microelectronics

Dual N-Channel Enhancement Mode Field Effect Transistor


STF8236
STF8236

PDF File STF8236 PDF File


Description
STF8236Green Product Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.
0 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 22.
0 @ VGS=4.
5V 22.
5 @ VGS=4.
0V 6A 23.
0 @ VGS=3.
7V 25.
0 @ VGS=3.
1V 29.
0 @ VGS=2.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1 S1 S1 G1 D1/D2 S2 S2 G2 DFN 2X2 Bottom Drain Contact (D1/D2) G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 20 ±12 6 4.
8 36 1.
4 0.
9 -55 to 150 90 Units V V A A A W W °C °C/W Details are subject to change without notice.
1 Oct,24,2014 www.
samhop.
com.
tw STF8236 Ver 1.
0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=16V , VGS=0V VGS= ±8V , VDS=0V 20 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr tD(OFF) Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=1.
0mA VGS=4.
5V , ID=3.
0A VGS=4.
0V , ID=3.
0A VGS=3.
7V , ID=3.
0A VGS=3.
1V , ID=3.
0A VGS=2.
5V , ID=1.
5A VDS=5V , ID=3A VDD=16V ID=3A VGS=4.
5V RGEN= 6 ohm VDS=16V,ID=6A, VGS=4.
5V 0.
5 14.
0 14.
5 15.
0 15.
5 17.
5 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=6A Notes a.
Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.
Guaranteed by design,...



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