Small-Cell Power Amplifier Module
Description
FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.
5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant • Multi-Carrier Capability
APPLICATIONS • WCDMA, HSDPA and LTE Air Interfaces • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals
AWB7127
2.
11 GHz through 2.
17 GHz Small-Cell Power Amplifier Module
Data Sheet - Rev 2.
1
M41 Package 14 Pin 7 mm x 7 mm x 1.
3 mm
Surface Mount Module
PRODUCT DESCRIPTION The AWB7127 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures.
Designed for WCDMA, HSDPA and LTE air interfaces operating in the 2.
11 GHz to 2.
17 GHz band, the AWB7127 delivers up to +24.
5 dBm of WCDMA (64 DPCH)
power with an ACPR of -50 dBc.
It operates from a convenient +4.
2 V supply and provides 30 dB of gain.
The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.
3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Figure 1: Block Diagram 09/2012
AWB7127
VREF 1 GND 2 GND 3 VCC1 4 RFIN 5 GND 6
VDET 7
GND
14 GND 13 GND 12 RFOUT 11 VCC2 10 GND 9 GND 8 GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 GND Ground
4
VCC1
Supply Voltage
5
RFIN
RF Input
6 GND Ground
7
VDET
Detector Voltage
8 GND Ground
9 GND Ground
10 GND Ground
11
VCC2
Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
2
Data Sheet - Rev 2.
1 09/2012...
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